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Ka Band Power GaAs MESFET Chip
AFM06P2-000 Features
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC-40 GHz s 0.25 m Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
0.327 mm 0.655 mm
Chip thickness = 0.1 mm.
Drain 0.395 mm
0.110 mm
Gate
0.110 mm
Description
The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 m and a total gate periphery of 600 m. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance.
Absolute Maximum Ratings
Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 1.1 W -65 to +150C 175C
Electrical Specifications at 25C
Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (add) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (add) Thermal Resistance (JC) VDS = 5 V, IDS = 100 mA, F = 30 GHz TBASE = 25C VDS = 5 V, IDS = 100 mA, F = 18 GHz Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 A Min. 130.0 90.0 1.0 8.0 Typ. 200.0 120.0 3.0 12.0 22.5 9.0 23.0 22.0 4.5 15.0 160.0 5.0 Max. 270.0 Unit mA mS -V -V dBm dB % dBm dB % C/W
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
1
Ka Band Power GaAs MESFET Chip
AFM06P2-000
Typical Performance Data
VGS = 0 V 160 -0.5 V
Total Power Dissipation PT (W)
200
1.50 1.25 1.00 0.75 0.50 0.25 0 0 50 100 150 200
lDS (mA)
120 80 40 0 0 1 2 3
-1.0 V -1.5 V -2.0 V -2.5 V 4 5
VDS (V)
TBASE (C)
I-V
Power Derating
2
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chip
AFM06P2-000
Typical S-Parameters (VDS = 5 V, IDS = 120 mA)
Freq. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag. 0.943 0.905 0.876 0.856 0.843 0.835 0.830 0.827 0.825 0.825 0.825 0.826 0.828 0.390 0.832 0.834 0.837 0.839 0.842 0.845 0.847 0.850 0.852 0.855 0.857 0.860 0.862 0.864 0.866 0.868 0.870 0.872 0.874 0.876 0.878 0.869 0.881 0.883 0.884 Ang. -63.246 -86.534 -104.502 -118.460 -129.538 -138.558 -146.091 -152.503 -158.149 -163.140 -167.642 -171.656 -175.561 -169.110 177.551 167.439 171.378 168.496 165.727 163.057 160.476 157.974 155.545 153.182 150.880 148.635 146.443 144.301 142.207 140.157 138.151 136.185 134.259 132.371 130.519 128.603 126.920 125.171 123.453 Mag. 7.140 6.080 5.155 4.405 3.807 3.328 2.940 2.619 2.352 2.125 1.931 1.672 1.615 1.485 1.370 1.267 1.175 1.091 1.016 0.947 0.884 0.826 0.773 0.725 0.680 0.638 0.600 0.564 0.531 0.500 0.471 0.444 0.419 0.395 0.373 0.352 0.333 0.314 0.297 S21 Ang. 136.7680 120.3940 107.1240 96.0760 86.5660 68.1380 60.4900 63.4278 56.8180 50.5720 44.6260 38.9370 33.4710 28.2060 23.1220 18.2060 13.4470 8.8370 4.3690 0.0360 -4.6500 -8.2380 -12.1880 -16.0160 -19.7270 -23.3210 -26.8020 -30.1710 -33.4290 -36.5690 -39.6210 -42.5560 -45.3870 -48.1120 -50.7340 -53.2520 -55.6670 -567.9680 -60.1850 Mag. 0.031 0.040 0.045 0.047 0.048 0.049 0.048 0.048 0.046 0.045 0.044 0.042 0.051 0.039 0.038 0.037 0.036 0.035 0.034 0.033 0.033 0.033 0.034 0.034 0.035 0.036 0.037 0.039 0.040 0.042 0.043 0.045 0.047 0.048 0.050 0.052 0.054 0.056 0.057 S12 Ang. 53.027 39.817 29.754 21.969 15.797 10.797 6.688 3.296 0.510 -1.735 -3.476 -4.733 -5.512 -5.818 -5.654 -5.028 -3.962 -2.492 -0.675 1.413 3.678 6.018 8.333 10.535 12.552 14.335 15.855 17.104 18.085 18.811 19.303 19.582 19.671 19.594 19.370 19.020 18.561 18.008 17.375 Mag. 0.340 0.340 0.346 0.360 0.368 0.399 0.423 0.448 0.473 0.499 0.524 0.549 0.564 0.598 0.621 0.643 0.664 0.685 0.704 0.722 0.740 0.756 0.722 0.786 0.800 0.813 0.825 0.837 0.847 0.857 0.867 0.875 0.884 0.891 0.898 0.905 0.911 0.917 0.923 S22 Ang. -48.993 -66.574 -69.967 -90.387 -98.818 -105.932 -112.160 -117.776 -122.953 -127.805 -132.404 -136.801 -141.028 -145.111 -149.064 -152.901 -156.631 -160.260 -163.695 -167.239 -160.596 -173.869 -177.061 179.825 176.688 163.824 160.933 168.112 165.360 162.674 160.052 157.494 154.997 152.560 150.818 147.859 145.592 143.378 141.216 k 0.160 0.240 0.321 0.403 0.486 0.569 0.643 0.693 0.825 0.913 1.000 1.088 1.174 1.257 1.336 1.408 1.471 1.521 1.556 1.574 1.572 1.551 1.513 1.460 1.935 1.321 1.243 1.162 1.081 1.002 0.926 0.854 0.785 0.721 0.661 0.605 0.553 0.505 0.461 MAG (dB) 23.563 21.828 20.614 19.690 18.953 18.348 17.841 1.410 17.041 16.721 16.350 14.389 13.447 12.715 12.105 11.581 11.124 10.724 10.373 10.066 9.800 9.574 9.387 9.240 9.138 9.087 9.101 9.208 9.482 10.501 10.367 9.943 9.523 9.109 8.701 8.299 6.904 6.516 7.133
S-Parameters include the effects of two 0.8 mil diameter bond wires, each 10 mil long, to each of the gate and drain terminals.
Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com
Specifications subject to change without notice. 6/99A
3

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